Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon
Kaminskii, A.S., Lavrov, E.V.Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.145
File:
PDF, 308 KB
1995