On the Behaviour of the Divacancy in Silicon during Anneals...

Materials Science Forum 1995 Vol. 196-201

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

Trauwaert, M.-A., Vanhellemont, Jan, Maes, H.E., Van Bavel, A.-M., Langouche, G., Stesmans, Andre, Clauws, Paul
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1147
File:
PDF, 390 KB
1995
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