Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Materials Science Forum 2002 Vol. 389-393

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Ohno, Toshiyuki, Yamaguchi, Hirotaka, Kojima, Kazutoshi, Nishio, Johji, Masahara, Koh, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Yoshida, Sadafumi
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.447
File:
PDF, 666 KB
2002
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