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Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants
Yano, Hiroshi, Oshiro, Yuki, Okamoto, Dai, Hatayama, Tomoaki, Fuyuki, TakashiVolume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.603
Date:
March, 2011
File:
PDF, 328 KB
english, 2011