Evidence for High Vacancy Concentrations in Heavily Doped...

Materials Science Forum 1995 Vol. 196-201

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Weyer, G., Fanciulli, M., Freitag, Kristian, Nylandsted-Larsen, Arne, Lindroos, M., Müller, E., Vestergaard, H.C.
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1117
File:
PDF, 378 KB
1995
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