SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in...

Materials Science Forum 1995 Vol. 196-201

SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

Buyanova, I.A., Henry, Anne, Monemar, Bo, Lindström, J. Lennart, Sheinkman, Moissei K., Oehrlein, G.S.
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1807
File:
PDF, 421 KB
1995
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