INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT

CHOI, YOUNG CHUL, CHA, HO-YOUNG, EASTMAN, LESTER F., SPENCER, MICHAEL G.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156404003034
Date:
September, 2004
File:
PDF, 337 KB
english, 2004
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