Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
Shi, Y., Suezawa, Masashi, Wu, Feng Mei, Imai, M., Zheng, Y.D., Sumino, KojiVolume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.157
File:
PDF, 406 KB
1995