Enhanced Annealing of MeV Ion Implantation Damage in N-Type...

Materials Science Forum 2011 / 3 Vol. 679-680

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation

Løvlie, Lars S., Svensson, Bengt G.
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.233
Date:
March, 2011
File:
PDF, 359 KB
english, 2011
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