Effect of Proton Irradiation Induced Defects on 4H-SiC...

Materials Science Forum 2011 / 3 Vol. 679-680

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

Stevens, Rupert C., Vasilevskiy, Konstantin, Lees, John E., Wright, Nicolas G., Horsfall, Alton B.
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.547
Date:
March, 2011
File:
PDF, 328 KB
english, 2011
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