Measurement of Oi in Heavily Boron Doped Chemical Thinned...

Solid State Phenomena 2005 Vol. 108-109

Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy

Zschorsch, Markus, Gärtner, G., Möller, Hans Joachim, von Ammon, Wilfried
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Volume:
108-109
Year:
2005
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.108-109.655
File:
PDF, 313 KB
english, 2005
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