Modeling the floating-body effects of fully depleted,...

Solid-State Electronics 2004 Vol. 48; Iss. 6

Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs

Mansun Chan, Pin Su, Hui Wan, Chung-Hsun Lin, Samuel K.-H. Fung, Ali M. Niknejad, Chenming Hu, Ping K. Ko
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Volume:
48
Year:
2004
Language:
english
Pages:
10
DOI:
10.1016/j.sse.2003.12.012
File:
PDF, 669 KB
english, 2004
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