Volume 48; Issue 6

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Solid-State Electronics
Volume 48; Issue 6

Solid-State Electronics

Volume 48; Issue 6

1

Foreword

Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 198 KB

english, 2004

2

Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs

Mansun Chan, Pin Su, Hui Wan, Chung-Hsun Lin, Samuel K.-H. Fung, Ali M. Niknejad, Chenming Hu, Ping K. Ko

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 669 KB

english, 2004

3

Emerging silicon-on-nothing (SON) devices technology

S. Monfray, T. Skotnicki, C. Fenouillet-Beranger, N. Carriere, D. Chanemougame, Y. Morand, S. Descombes, A. Talbot, D. Dutartre, C. Jenny, P. Mazoyer, R. Palla, F. Leverd, Y. Le Friec, R. Pantel, S. B

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 693 KB

english, 2004

4

Laterally asymmetric channel engineering in fully depleted double gate SOI MOSFETs for high performance analog applications

Abhinav Kranti, Tsung Ming Chung, Denis Flandre, Jean-Pierre Raskin

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 569 KB

english, 2004

5

New SOI lateral power devices with trench oxide

J.M. Park, S. Wagner, T. Grasser, S. Selberherr

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 409 KB

english, 2004

6

Composite ULP diode fabrication, modelling and applications in multi-Vth FD SOI CMOS technology

David Levacq, Christophe Liber, Vincent Dessard, Denis Flandre

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 418 KB

english, 2004

7

Double gate silicon on insulator transistors. A Monte Carlo study

F. Gámiz, J.B. Roldán, A. Godoy, J.E. Carceller, P. Cartujo

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 468 KB

english, 2004

8

Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control

Toshinori Numata, Mitsuhiro Noguchi, Shin-ichi Takagi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 339 KB

english, 2004

9

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

M. Uematsu, H. Kageshima, K. Shiraishi, M. Nagase, S. Horiguchi, Y. Takahashi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 473 KB

english, 2004

10

Multiple-gate SOI MOSFETs

Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 706 KB

english, 2004

11

Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

E. Simoen, J.M. Rafı́, A. Mercha, C. Claeys

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 401 KB

english, 2004

12

Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study

Sayed Hasan, Jing Wang, Mark Lundstrom

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 576 KB

english, 2004

13

Qualification of 300 mm SOI CMOS substrate material: readiness for development and manufacturing

H. Hovel, M. Almonte, P. Tsai, J.D. Lee, S. Maurer, R. Kleinhenz, D. Schepis, R. Murphy, P. Ronsheim, A. Domenicucci, J. Bettinger, D. Sadana

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 304 KB

english, 2004

14

Nanoscale SOI MOSFETs: a comparison of two options

Thomas J. Walls, Victor A. Sverdlov, Konstantin K. Likharev

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 709 KB

english, 2004

15

Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs

François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 681 KB

english, 2004

16

Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects

K. Oshima, S. Cristoloveanu, B. Guillaumot, H. Iwai, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 708 KB

english, 2004

17

Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation

David Esseni, Enrico Sangiorgi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 407 KB

english, 2004

18

Fully depleted SOI process and device technology for digital and RF applications

F. Ichikawa, Y. Nagatomo, Y. Katakura, M. Itoh, S. Itoh, H. Matsuhashi, T. Ichimori, N. Hirashita, S. Baba

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 483 KB

english, 2004

19

Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates

Christophe Maleville, Carlos Mazuré

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 691 KB

english, 2004

20

A process/physics-based compact model for nonclassical CMOS device and circuit design

J.G. Fossum, L. Ge, M.-H. Chiang, V.P. Trivedi, M.M. Chowdhury, L. Mathew, G.O. Workman, B.-Y. Nguyen

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 394 KB

english, 2004

21

Blue sky in SOI: new opportunities for quantum and hot-electron devices

S. Luryi, A. Zaslavsky

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 472 KB

english, 2004

22

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

J.R Schwank, V Ferlet-Cavrois, P.E Dodd, M.R Shaneyfelt, G Vizkelethy, P Paillet, O Flament

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 1.05 MB

english, 2004

23

Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

C. Fenouillet-Beranger, T. Skotnicki, S. Monfray, N. Carriere, F. Boeuf

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

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