Schottky barrier characteristics of ternary silicide...

Solid-State Electronics 2004 Vol. 48; Iss. 7

Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(1 0 0) contacts formed by solid phase reaction of multilayer

Shiyang Zhu, R.L. Van Meirhaeghe, S. Forment, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li
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Volume:
48
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2004.02.006
File:
PDF, 336 KB
english, 2004
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