Volume 48; Issue 7

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Solid-State Electronics
Volume 48; Issue 7

Solid-State Electronics

Volume 48; Issue 7

1

Fabrication of trench-gate power MOSFETs by using a dual doped body region

M.H. Juang, W.T. Chen, C.I. Ou-Yang, S.L. Jang, M.J. Lin, H.C. Cheng

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

2

Conduction type change with annealing in thin silicon-on-insulator wafers

Yoshitake Shibata, Masaya Ichimura, Eisuke Arai

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 267 KB

english, 2004

3

Germanium profile design options for SiGe LEC HBTs

Michael Schroter, Hung Tran, Wolfgang Kraus

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 464 KB

english, 2004

4

Design considerations for novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with sub-100 nm gate length

Manoj Saxena, Subhasis Haldar, Mridula Gupta, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 304 KB

english, 2004

5

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

M.M.A. Hakim, A. Haque

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 326 KB

english, 2004

6

Self-consistent simulations of mesoscopic devices operating under a finite bias

Erik Forsberg, Jan-Olof J. Wesström

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 492 KB

english, 2004

7

Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method

Ji-Sun Park, Hyungsoon Shin, Daniel Connelly, Dan Yergeau, Zhiping Yu, Robert W. Dutton

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 517 KB

english, 2004

8

Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

M. Cassé, J. Pretet, S. Cristoloveanu, T. Poiroux, C. Fenouillet-Beranger, F. Fruleux, C. Raynaud, G. Reimbold

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 314 KB

english, 2004

9

Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

J.M. Rafı́, A. Mercha, E. Simoen, C. Claeys

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 657 KB

english, 2004

10

Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation

Jing-Fu Dai, Chia-Cherng Chang, Szu-Ju Li, Yao-Tsung Tsai

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 391 KB

english, 2004

11

Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs

Ho-Young Cha, Y.C. Choi, A.O. Konstantinov, C.I. Harris, P. Ericsson, L.F. Eastman, M.G. Spencer

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 315 KB

english, 2004

12

Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1−xAs layer at emitter/base heterojunction

Shiou-Ying Cheng

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 410 KB

english, 2004

13

A seven-parameter nonlinear I–V characteristics model for sub-μm range GaAs MESFETs

M.S. Islam, M.M. Zaman

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 869 KB

english, 2004

14

Improved subthreshold slope method for precise extraction of gate capacitive coupling coefficients in stacked gate and source-side injection flash memory cells

Caleb Yu-Sheng Cho, Ming-Jer Chen

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 293 KB

english, 2004

15

Observation of anomalous leakage increase of narrow and short BCPMOS

Y.Z. Xu, O. Pohland, C. Cai, H. Puchner

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 373 KB

english, 2004

16

Modelling and characterisation of the OCVD response at an arbitrary time and injection level

Salvatore Bellone, Heinz-Christoph Neitzert, Gian Domenico Licciardo

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 343 KB

english, 2004

17

High reliability GaN-based light-emitting diodes with photo-enhanced wet etching

Lung-Chien Chen, Yin-Lin Huang

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 376 KB

english, 2004

18

Source-gated transistors in hydrogenated amorphous silicon

J.M. Shannon, E.G. Gerstner

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 372 KB

english, 2004

19

Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 297 KB

english, 2004

20

Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(1 0 0) contacts formed by solid phase reaction of multilayer

Shiyang Zhu, R.L. Van Meirhaeghe, S. Forment, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 336 KB

english, 2004

21

Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions

K. Kalna, A. Asenov

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 473 KB

english, 2004

22

Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors

K.W. Chew, K.S. Yeo, S.-F. Chu

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 439 KB

english, 2004

23

Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson, Jörgen Olsson, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 340 KB

english, 2004

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