Characterization of double gate MOSFETs fabricated by a...

Solid-State Electronics 2004 Vol. 48; Iss. 12

Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film

Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, Mansun Chan
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Volume:
48
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2004.04.015
File:
PDF, 364 KB
english, 2004
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