Volume 48; Issue 12

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Solid-State Electronics
Volume 48; Issue 12

Solid-State Electronics

Volume 48; Issue 12

1

A comprehensive geometrical and biasing analysis for latchup in 0.18-μm CoSi2 STI CMOS structure

Wang-Ling Goh, Kiat-Seng Yeo

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 340 KB

english, 2004

2

The SILC study by PDO method

Z(i)ou Wang, Heqiu Zhang, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 286 KB

english, 2004

3

Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures

V.A. Stuchinsky

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 348 KB

english, 2004

4

Complementary tunneling transistor for low power application

P.-F. Wang, K. Hilsenbeck, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, W. Hansch

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 465 KB

english, 2004

5

Promotion of piezoelectric properties of lead zirconate titanate ceramics with (Zr,Ti) partially replaced by Nb2O5

Bing-Huei Chen, Cheng-Liang Huang, Long Wu

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 297 KB

english, 2004

6

Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing

Myung-Sik Son, Keon-Ho Yoo, Jin Jang

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 460 KB

english, 2004

7

Preparation and electrical properties of SrTiO3 ceramics doped with M2O3–PbO–CuO

Jingchang Zhao, Xinghui Wu, Longtu Li, Xian Li

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 406 KB

english, 2004

8

Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas

J.C. Martı́nez-Orozco, L.M. Gaggero-Sager, Stoyan J. Vlaev

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 379 KB

english, 2004

9

A closed-form expression to analyze electronic properties in delta-doped heterostructures

Xiying Chen, Bahram Nabet

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 333 KB

english, 2004

10

Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

C.K. Maiti, G.K. Dalapati, S. Chatterjee, S.K. Samanta, S. Varma, S. Patil

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 353 KB

english, 2004

11

High resolution transport spectroscopy in ultimate MOSFETs at very low temperature

M. Sanquer, X. Jehl, M. Specht, G. Bertrand, G. Guégan, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 332 KB

english, 2004

12

Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

Armin T. Tilke, Steffen Rothenhäußer, Markus Rochel, Knut Stahrenberg, Klaus Goller, Axel Junge, Andreas Pribil, Bernd Föste, Jörg Wiedemann, Martin Tegeler, Jörg Berkner, Cajetan Wagner, Claus Dahl

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 830 KB

english, 2004

13

Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film

Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, Mansun Chan

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 364 KB

english, 2004

14

Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs

Zhonghai Shi, David Onsongo, Raghaw Rai, Srikanth B. Samavedam, Sanjay K. Banerjee

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 660 KB

english, 2004

15

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

Jun-ichi Nishizawa, Akihiko Murai, Hiroki Makabe, Osamu Ito, Tomoyuki Kimura, Ken Suto, Yutaka Oyama

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 276 KB

english, 2004

16

Capacitance analysis of devices with electrically floating regions

Ken Yamaguchi, Masatada Horiuchi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 599 KB

english, 2004

17

Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time

Mizuki Ono, Tsunehiro Ino, Masato Koyama, Akira Takashima, Akira Nishiyama

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 578 KB

english, 2004

18

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

M. von Haartman, D. Wu, B.G. Malm, P.-E. Hellström, S.-L. Zhang, M. Östling

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 409 KB

english, 2004

19

Determining the generation lifetime in a MOS capacitor using linear sweep techniques

Milan Ťapajna, Ladislav Harmatha

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 254 KB

english, 2004

20

Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation

Ya.I. Alivov, D.C. Look, B.M. Ataev, M.V. Chukichev, V.V. Mamedov, V.I. Zinenko, Yu.A. Agafonov, A.N. Pustovit

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 271 KB

english, 2004

21

Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions

Leonardo Martin Hillkirk

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 1005 KB

english, 2004

22

Analysis and optimisation of the trench gated emitter switched thyristor

O. Spulber, M. Sweet, K. Vershinin, N. Luther-King, M.M. De Souza, E.M. Sankara Narayanan

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 509 KB

english, 2004

23

Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs

Kwangseok Han, Hyungcheol Shin, Kwyro Lee

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 371 KB

english, 2004

24

Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes

S. Venkatachalam, Rajendra Kumar, D. Mangalaraj, Sa.K. Narayandass, Kyunghae Kim, Junsin Yi

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 377 KB

english, 2004

25

Integral function method for determination of nonlinear harmonic distortion

Antonio Cerdeira, Miguel A. Alemán, Magali Estrada, Denis Flandre

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 413 KB

english, 2004

26

A sum-over-paths impulse-response moment-extraction algorithm for RC IC-interconnect networks

Y.L. Le Coz, D. Krishna, D.M. Petranovic, W.M. Loh, P. Bendix

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 501 KB

english, 2004

27

Influence of annealing ambient on GaAs oxide prepared by the liquid phase method

Dei-Wei Chou, Liang-Tang Wang, Hwei-Heng Wang, Po-wen Sze, Yeong-Her Wang, Mau-Phon Houng

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 300 KB

english, 2004

28

Predictive model of a reduced surface field p-LDMOSFET using neural network

Byunghwhan Kim, Sungmo Kim, Dae Woo Lee, Tae Moon Roh, Jongdae Kim

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 332 KB

english, 2004

29

Analytical model for the programming of source side injection SST superflash split-gate cell using two-dimensional analysis

Huinan Guan, Dana Lee, G.P. Li

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 421 KB

english, 2004

30

A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects

X. Zhou, S.B. Chiah, K.Y. Lim

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 415 KB

english, 2004

31

LDMOS in SOI technology with very-thin silicon film

M. Bawedin, C. Renaux, D. Flandre

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 561 KB

english, 2004

32

Simulation of submicrometer metal–semiconductor–metal ultraviolet photodiodes on gallium nitride

J. Li, W.R. Donaldson, T.Y. Hsiang

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 1024 KB

english, 2004

33

Field emission of vertically-aligned carbon nanotube arrays grown on porous silicon substrate

Juntao Li, Wei Lei, Xiaobing Zhang, Baoping Wang, Long Ba

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 715 KB

english, 2004

34

Impulse responses of submicron GaAs photodetectors

T. Ohno, K. Ishibashi, Y. Aoyagi, Y. Aida

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 296 KB

english, 2004

35

Comment on “Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts”

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 350 KB

english, 2004

36

Response to “Comment on ‘Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts”’ [Solid State Electron. 2004;48:335–8]

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 267 KB

english, 2004

37

Calculation of lattice heating in SiC RF power devices

Kent Bertilsson, C. Harris, Hans-Erik Nilsson

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 756 KB

english, 2004

38

Author index

Journal:

Solid-State Electronics

Year:

2004

File:

PDF, 48 KB

2004

39

Keyword index

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 44 KB

english, 2004

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