Characteristics of 4H–SiC MOS interface annealed in N2O

Solid-State Electronics 2005 Vol. 49; Iss. 6

Characteristics of 4H–SiC MOS interface annealed in N2O

Keiko Fujihira, Yoichiro Tarui, Masayuki Imaizumi, Ken-ichi Ohtsuka, Tetsuya Takami, Tatsuya Shiramizu, Kazumasa Kawase, Jyunji Tanimura, Tatsuo Ozeki
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Volume:
49
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2004.10.016
File:
PDF, 377 KB
english, 2005
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