Volume 49; Issue 6

Main
Solid-State Electronics
Volume 49; Issue 6

Solid-State Electronics

Volume 49; Issue 6

1

Characteristics of 4H–SiC MOS interface annealed in N2O

Keiko Fujihira, Yoichiro Tarui, Masayuki Imaizumi, Ken-ichi Ohtsuka, Tetsuya Takami, Tatsuya Shiramizu, Kazumasa Kawase, Jyunji Tanimura, Tatsuo Ozeki

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 377 KB

english, 2005

2

Accurate modeling and parameter extraction method for organic TFTs

M. Estrada, A. Cerdeira, J. Puigdollers, L. Reséndiz, J. Pallares, L.F. Marsal, C. Voz, B. Iñiguez

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 484 KB

english, 2005

3

Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes

Ş. Karataş, Ş. Altındal

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 270 KB

english, 2005

4

Normal distribution of confinement energy from a photoluminescence line shape analysis in oxidized porous silicon

Songyan Chen, Yanhua Huang, Beini Cai

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 369 KB

english, 2005

5

Electrical properties of [1 0 0]-oriented CVD diamond film

Qingfeng Su, Jinfang Lu, Linjun Wang, Jianmin Liu, Jianfeng Ruan, Jiangtao Cui, Weimin Shi, Yiben Xia

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 310 KB

english, 2005

6

A TCAD methodology for high-speed photodetectors

Biju Jacob, Bernd Witzigmann, Michaela Klemenc, Christophe Petit

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 339 KB

english, 2005

7

Electron transport modeling in the inversion layers of 4H and 6H–SiC MOSFETs on implanted regions

Yu Anne Zeng, Marvin H. White, Mrinal K. Das

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 499 KB

english, 2005

8

Electrical properties of spray pyrolytic tin sulfide films

N. Koteeswara Reddy, K.T. Ramakrishna Reddy

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 288 KB

english, 2005

9

Temperature and field dependent mobility in pentacene-based thin film transistors

Mo Zhu, Guirong Liang, Tianhong Cui, Kody Varahramyan

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 403 KB

english, 2005

10

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

W.P. Leroy, K. Opsomer, S. Forment, R.L. Van Meirhaeghe

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 425 KB

english, 2005

11

An electron mobility model for wurtzite GaN

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 340 KB

english, 2005

12

Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

C. Maneux, M. Belhaj, B. Grandchamp, N. Labat, A. Touboul

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 414 KB

english, 2005

13

Two relaxation mechanisms in (Sr1−1.5xBix)TiO3 (x:0.0067)

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 479 KB

english, 2005

14

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

M. von Haartman, J. Westlinder, D. Wu, B.G. Malm, P.-E. Hellström, J. Olsson, M. Östling

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 367 KB

english, 2005

15

Hooge noise parameter of epitaxial n-GaN on sapphire

Nobuhisa Tanuma, Munecazu Tacano, Jan Pavelka, Sumihisa Hashiguchi, Josef Sikula, Toshiaki Matsui

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

16

Identical resonant features of THz photoconductivity and plasmon absorption in a grid-gated double-quantum well FET

V.V. Popov, T.V. Teperik, Yu.N. Zayko, S.J. Allen, N.J.M. Horing

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 257 KB

english, 2005

17

Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells

Habibe Bayhan, A. Sertap Kavasoğlu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 318 KB

english, 2005

18

High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implant

Mary Chen, Marko Sokolich, David Chow, Bin Shi, Rajesh Rajavel, Steven Bui, Yakov Royter, Steve Thomas III, Charles Fields

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

19

A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes

A. Banoushi, M.R. Kardan, M. Ataee Naeini

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 557 KB

english, 2005

20

On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature

A. Caddemi, G. Crupi, N. Donato

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 408 KB

english, 2005

21

Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers

Khairurrijal, Fatimah A. Noor, Sukirno

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 311 KB

english, 2005

22

Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications

Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Tetsu Ohtou, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

23

Modeling MOSFET surface capacitance behavior under non-equilibrium

Abhishek Kapoor, R.P. Jindal

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 334 KB

english, 2005

24

The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

Becca M. Haugerud, Mustayeen B. Nayeem, Ramkumar Krithivasan, Yuan Lu, Chendong Zhu, John D. Cressler, Rona E. Belford, Alvin J. Joseph

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 354 KB

english, 2005

25

Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes

Atul Mahajan, B.J. Skromme

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 452 KB

english, 2005

26

Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s

F. Principato, A. Caddemi, G. Ferrante

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 2.02 MB

english, 2005

27

Preparation and gas-sensing properties of NiFe2O4 semiconductor materials

Liufang Yang, Yongan Xie, Heyun Zhao, Xinghui Wu, Yude Wang

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 385 KB

english, 2005

28

Parameter sensitivity for optimal design of 65 nm node double gate SOI transistors

Tao Chuan Lim, G. Alastair Armstrong

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 382 KB

english, 2005

29

A numerical study of scaling issues for trench power MOSFETs

J. Roig, I. Cortés, D. Jiménez, D. Flores, B. Iñiguez, S. Hidalgo, J. Rebollo

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 555 KB

english, 2005

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски