Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
M. von Haartman, J. Westlinder, D. Wu, B.G. Malm, P.-E. Hellström, J. Olsson, M. ÖstlingVolume:
49
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.sse.2005.03.009
File:
PDF, 367 KB
english, 2005