A new partial SOI power device structure with P-type buried...

Solid-State Electronics 2005 Vol. 49; Iss. 12

A new partial SOI power device structure with P-type buried layer

Baoxing Duan, Bo Zhang, Zhaoji Li
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Volume:
49
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2005.09.012
File:
PDF, 324 KB
english, 2005
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