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Conductance deep-level transient spectroscopy study of 1 μm gate length 4H-SiC MESFETs
Malek Gassoumi, Jean-Marie Bluet, Imène Dermoul, Hassen Maaref, Gérard Guillot, Erwan Morvan, Christian Dua, Christian BrylinskiVolume:
50
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2005.10.030
File:
PDF, 172 KB
english, 2006