Volume 50; Issue 2

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Solid-State Electronics
Volume 50; Issue 2

Solid-State Electronics

Volume 50; Issue 2

1

Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of AlmGa1−mN/GaN MODFET

Manju K. Chattopadhyay, Sanjiv Tokekar

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

2

A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition

Kodigala Subba Ramaiah, Y.K. Su, S.J. Chang, C.H. Chen

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 406 KB

english, 2006

3

Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films

M.H. Juang, T.Y. Lin, S.L. Jang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 142 KB

english, 2006

4

Conductance deep-level transient spectroscopy study of 1 μm gate length 4H-SiC MESFETs

Malek Gassoumi, Jean-Marie Bluet, Imène Dermoul, Hassen Maaref, Gérard Guillot, Erwan Morvan, Christian Dua, Christian Brylinski

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

5

A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET’s with deuterium treatment process

Jae-Sung Lee, Yong-Hyun Lee, Karl Hess

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 175 KB

english, 2006

6

Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

J.-Y. Wei, S. Maikap, M.H. Lee, C.C. Lee, C.W. Liu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 137 KB

english, 2006

7

Granular description of charging kinetics in silicon nanocrystals memories

C. Busseret, S. Ferraton, L. Montès, J. Zimmermann

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

8

AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 120 KB

english, 2006

9

Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I–V curves

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 974 KB

english, 2006

10

Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

H. Wong, C.K. Wong, Y. Fu, J.J. Liou

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 204 KB

english, 2006

11

Amorphous and excimer laser annealed SiC films for TFT fabrication

B. García, M. Estrada, K.F. Albertin, M.N.P. Carreño, I. Pereyra, L. Resendiz

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 313 KB

english, 2006

12

Proton and gamma radiation effects in a new first-generation SiGe HBT technology

Becca M. Haugerud, Mustansir M. Pratapgarhwala, Jonathan P. Comeau, Akil K. Sutton, A.P. Gnana Prakash, John D. Cressler, Paul W. Marshall, Cheryl J. Marshall, Ray L. Ladbury, Monir El-Diwany, Courtne

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 332 KB

english, 2006

13

LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb

Yimao Cai, Ru Huang, Xiaonan Shan, Falong Zhou, Yan Li, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

14

Electrical characteristics of high-κ dielectric film grown by direct sputtering method

Banani Sen, C.K. Sarkar, Hei Wong, M. Chan, C.W. Kok

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 175 KB

english, 2006

15

Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching

Chin-Lung Cheng, Kuei-Shu Chang-Liao, Tien-Ko Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 272 KB

english, 2006

16

Measurement of generation parameters on Ru/HfO2/Si MOS capacitor

M. Ťapajna, L. Harmatha, K. Hušeková

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 157 KB

english, 2006

17

Benchmark tests on surface potential based charge-sheet models

Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 189 KB

english, 2006

18

Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique

Te-Chin Peng, Chih-Chao Yang, Yun-Hsun Huang, Meng-Chyi Wu, Chong-Long Ho, Wen-Jeng Ho

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 427 KB

english, 2006

19

Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET

Pouya Valizadeh, Egor Alekseev, Dimitris Pavlidis, Feng Yun, Hadis Morkoç

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 129 KB

english, 2006

20

Detection of hidden structures in a photoexcited semiconductor via principal-component analysis

Yuo-Hsien Shiau

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 513 KB

english, 2006

21

Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatment

J.D. Hwang, G.H. Yang, C.C. Lin, S.J. Chang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 169 KB

english, 2006

22

Electrical characteristics of GaAs nanocrystalline thin film

J. Nayak, S.N. Sahu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 365 KB

english, 2006

23

Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices

H. Colder, R. Rizk, L. Pichon, O. Bonnaud

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 184 KB

english, 2006

24

SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

Emil V. Jelenkovic, K.Y. Tong, W.Y. Cheung, S.P. Wong, B.R. Shi, G.K.H. Pang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 306 KB

english, 2006

25

Charge storage in a metal–oxide–semiconductor capacitor containing cobalt nanocrystals

Dengtao Zhao, Yan Zhu, Jianlin Liu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 147 KB

english, 2006

26

New pixel circuits for driving active matrix organic light emitting diodes

Bo-Ting Chen, Ya-Hsiang Tai, Yu-Ju Kuo, Chun-Chien Tsai, Huang-Chung Cheng

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 349 KB

english, 2006

27

A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Chia-Shih Cheng, Yuan-Jui Shih, Hsien-Chin Chiu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

28

Electrostatic coupling between nanocrystals in a quantum flash memory

A.S. Cordan, Y. Leroy, B. Leriche

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 138 KB

english, 2006

29

IFC - Editorial Board

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 81 KB

english, 2006

30

Performance improvement of organic thin film transistors by SiO2/pentacene interface modification using an electrostatically assembled PDDA monolayer

Mo Zhu, Kody Varahramyan

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 315 KB

english, 2006

31

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Shiyang Zhu, J. Singh, Chunxiang Zhu, A. Du, M.F. Li

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 301 KB

english, 2006

32

A numerical study of field plate configurations in RF SOI LDMOS transistors

I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 387 KB

english, 2006

33

High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT

Shu-Jenn Yu, Wei-Chou Hsu, Yeong-Jia Chen, Chang-Luen Wu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 189 KB

english, 2006

34

Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics

Bahniman Ghosh, Jer-Hueih Chen, Xiao-Feng Fan, Leonard F. Register, Sanjay K. Banerjee

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 162 KB

english, 2006

35

Comments on “Modeling MOSFET surface capacitance behavior under non-equilibrium”

Jin He, Xing Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 145 KB

english, 2006

36

Dose radiation effects in FinFETs

Xusheng Wu, Philip C.H. Chan, A. Orozco, A. Vazquez, A. Chaudhry, J.P. Colinge

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 272 KB

english, 2006

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