C∞-continuous high-temperature model for low-doped...

Solid-State Electronics 2006 Vol. 50; Iss. 7-8

C∞-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs

Yuri Houk, Benjamin Iñiguez, Denis Flandre, Alexei Nazarov
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Volume:
50
Year:
2006
Language:
english
Pages:
8
DOI:
10.1016/j.sse.2006.04.046
File:
PDF, 1.29 MB
english, 2006
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