Volume 50; Issue 7-8

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Solid-State Electronics
Volume 50; Issue 7-8

Solid-State Electronics

Volume 50; Issue 7-8

1

Surface-potential solutions to the Pao–Sah voltage equation

W.Z. Shangguan, M. Saeys, X. Zhou

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 681 KB

english, 2006

2

C∞-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs

Yuri Houk, Benjamin Iñiguez, Denis Flandre, Alexei Nazarov

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.29 MB

english, 2006

3

Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

4

Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology

B. Bindu, N. Lakshmi, K.N. Bhat, Amitava DasGupta

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

5

Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load

Cheon An Lee, Sung Hun Jin, Keum Dong Jung, Jong Duk Lee, Byung-Gook Park

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 218 KB

english, 2006

6

Edge termination strategies for a 4 kV 4H–SiC thyristor

P. Brosselard, D. Planson, S. Scharnholz, C. Raynaud, V. Zorngiebel, M. Lazar, J.-P. Chante, E. Spahn

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 329 KB

english, 2006

7

In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs

Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Michael Canonico, Matthias Passlack

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 103 KB

english, 2006

8

An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers

Tianbing Chen, Akil K. Sutton, Becca M. Haugerud, Walter Henderson, A.P. Gnana Prakash, John D. Cressler, Alan Doolittle, Xuefeng Liu, Alvin Joseph, Paul W. Marshall

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 611 KB

english, 2006

9

An explicit analytical charge-based model of undoped independent double gate MOSFET

Marina Reyboz, Olivier Rozeau, Thierry Poiroux, Patrick Martin, Jalal Jomaah

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

10

Simple parameter extraction method for illuminated solar cells

M. Chegaar, G. Azzouzi, P. Mialhe

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 124 KB

english, 2006

11

Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes

H. Contopanagos, A.G. Nassiopoulou

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 358 KB

english, 2006

12

An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects

Dipanjan Basu, Aloke K. Dutta

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 463 KB

english, 2006

13

Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts

A. Dixit, K.G. Anil, N. Collaert, P. Zimmerman, M. Jurczak, K. De Meyer

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 421 KB

english, 2006

14

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae-Horng Chen, Jeng-Hua Wei, Po-Yuan Lo, Hung-Hsiang Wang, Ming-Jinn Lai, Ming-Jinn Tsai, Tien Sheng Chao, Horng-Chih Lin, Tiao-Yuan Huang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.44 MB

english, 2006

15

Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions

Md Mazhar Ul Hoque, Zeynep Çelik-Butler, Samuel Martin, Chris Knorr, Constantin Bulucea

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 464 KB

english, 2006

16

Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes

Brian J. Johnson, Michael A. Capano, Michael A. Mastro

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

17

Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique

A.R. Saha, S. Chattopadhyay, R. Das, C. Bose, C.K. Maiti

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 318 KB

english, 2006

18

Microwave dielectric properties of (1 − x)(Mg0.95Co0.05)TiO3– xCa0.6La0.8/3TiO3 ceramics with V2O5 addition

Cheng-Liang Huang, Jun-Jie Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 871 KB

english, 2006

19

Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs

Ricky W. Chuang, Yueh Jye Chiu, Chia Lin Yu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

20

Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics

A. Saadoune, L. Dehimi, N. Sengouga, M. McPherson, B.K. Jones

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 621 KB

english, 2006

21

Effect of fabrication process on the charge trapping behavior of SiON thin films

Szu-Yu Wang, Hang-Ting Lue, Erh-Kun Lai, Ling-Wu Yang, Jeng Gong, Kuang-Chao Chen, Kuang-Yeu Hsieh, Joseph Ku, Chih-Yuan Lu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 153 KB

english, 2006

22

Device-partition method using equivalent-circuit model in three-dimensional device simulation

Chia-Cherng Chang, Szu-Ju Li, Yao-Tsung Tsai

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 355 KB

english, 2006

23

Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor

W.T. Chen, H.R. Chen, M.K. Hsu, S.Y. Chiu, G.H. Chen, Y.C. Chang, W.S. Lour

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 568 KB

english, 2006

24

Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors

L. Goux, Z. Xu, V. Paraschiv, J.G. Lisoni, D. Maes, L. Haspeslagh, G. Groeseneken, D.J. Wouters

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 400 KB

english, 2006

25

Fabrication and analysis of high-efficiency String Ribbon Si solar cells

Kenta Nakayashiki, Brian Rousaville, Vijay Yelundur, Dong Seop Kim, Ajeet Rohatgi, Robert Clark-Phelps, Jack I. Hanoka

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

26

A new analytic approximation to general diode equation

Jin He, Ming Fang, Bo Li, Yu Cao

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 149 KB

english, 2006

27

Application of PVD silver for integrated microwave passives in silicon technology

V.V. Levenets, R.E. Amaya, N.G. Tarr, T.J. Smy

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 422 KB

english, 2006

28

Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet, R. Clerc, G. Pananakakis, E. Picollet, N. Segura, S. Boret, S. Bruyère, J.P. Manceau, J.-C. Giraudin, P. Delpech, L. Montès, G. Ghibaudo

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 532 KB

english, 2006

29

Elastic and optical properties of BeS, BeSe and BeTe under pressure

R. Khenata, A. Bouhemadou, M. Hichour, H. Baltache, D. Rached, M. Rérat

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

30

Universal MOSFET gate impedance model for 200 MHz–20 GHz frequency range

Sri Priya R. Bandi, Clyde Washburn, P.R. Mukund, Jan Kolnik, Ken Paradis, Steve Howard, Jeff Burleson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 313 KB

english, 2006

31

Investigation of oxygen annealing effects on RF sputter deposited SiC thin films

R.M. Todi, K.B. Sundaram, A.P. Warren, K. Scammon

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.29 MB

english, 2006

32

Band gap widening and narrowing in moderately and heavily doped n-ZnO films

Anubha Jain, P. Sagar, R.M. Mehra

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 162 KB

english, 2006

33

A study on the synthesis from Li2CO3, NiO and Co3O4 and the electrochemical properties of cathode materials LiNi1−yCoyO2 for lithium secondary battery

Hye-Ryoung Park, Soon-Do Yoon

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 2.69 MB

english, 2006

34

Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN

Alexei Vertiatchikh, Ed Kaminsky, Julie Teetsov, Kevin Robinson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 290 KB

english, 2006

35

Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices

Kok Wai Chew, Kiat Seng Yeo, Shao-Fu Sanford Chu, Michael Cheng

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 512 KB

english, 2006

36

Electronic properties of Ge nanocrystals for non volatile memory applications

M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, E. Gautier

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 225 KB

english, 2006

37

IFC - Editorial Board

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 83 KB

english, 2006

38

Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

James C. Li, Marko Sokolich, Tahir Hussain, Peter M. Asbeck

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 307 KB

english, 2006

39

Charge transport mechanism of Al/Bi2Te3/Al thin film devices

J. Dheepa, R. Sathyamoorthy, P.J. Sebastian

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

40

Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering

Lung-Chien Chen, Sien-Chang Liu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 149 KB

english, 2006

41

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

Shiyang Zhu, M.F. Li

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 316 KB

english, 2006

42

An improved junction capacitance model for junction field-effect transistors

Hao Ding, Juin J. Liou, Claude R. Cirba, Keith Green

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

43

Modeling for reduced gate capacitance of nanoscale MOSFETs

Dai Yue-hua, Chen Jun-ning, Ke Dao-ming, Xu Chao, Sun Jia-e

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 203 KB

english, 2006

44

Colloidal quantum dot active layers for light emitting diodes

Jennifer G. Pagan, Edward B. Stokes, Kinnari Patel, Casey C. Burkhart, Michael T. Ahrens, Philip T. Barletta, Mark O’Steen

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 421 KB

english, 2006

45

A new analytic method to design multiple floating field limiting rings of power devices

Jin He, Mansun Chan, Xing Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 157 KB

english, 2006

46

A novel high performance insulated gate bipolar transistor

Fei Zhang, Lina Shi, Chengfang Li

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 174 KB

english, 2006

47

Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications

Michael Y. Levy, Christiana Honsberg

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 215 KB

english, 2006

48

High power 4H–SiC pin diodes (10 kV class) with record high carrier lifetime

Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett A. Hull

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

49

Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes

B.P. Harish, Navakanta Bhat, Mahesh B. Patil

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 283 KB

english, 2006

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