In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs
Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Michael Canonico, Matthias PasslackVolume:
50
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.sse.2006.05.017
File:
PDF, 103 KB
english, 2006