Energy band alignment and interface states in AlGaN/4H–SiC...

Solid-State Electronics 2006 Vol. 50; Iss. 7-8

Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes

Brian J. Johnson, Michael A. Capano, Michael A. Mastro
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Volume:
50
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2006.05.028
File:
PDF, 275 KB
english, 2006
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