Determination of the interface properties of Ni-silicided...

Solid-State Electronics 2006 Vol. 50; Iss. 7-8

Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique

A.R. Saha, S. Chattopadhyay, R. Das, C. Bose, C.K. Maiti
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Volume:
50
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2006.06.001
File:
PDF, 318 KB
english, 2006
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