Modelling of semiconductor diodes made of high defect...

Solid-State Electronics 2006 Vol. 50; Iss. 7-8

Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics

A. Saadoune, L. Dehimi, N. Sengouga, M. McPherson, B.K. Jones
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Volume:
50
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2006.06.004
File:
PDF, 621 KB
english, 2006
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