ICP-induced defects in GaN characterized by capacitance...

Solid-State Electronics 2006 Vol. 50; Iss. 11-12

ICP-induced defects in GaN characterized by capacitance analysis

Wen-How Lan, Kuo-Chin Huang, Kai Feng Huang
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Volume:
50
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2006.10.005
File:
PDF, 174 KB
english, 2006
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