Volume 50; Issue 11-12

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Solid-State Electronics
Volume 50; Issue 11-12

Solid-State Electronics

Volume 50; Issue 11-12

1

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Yogesh Singh Chauhan, Costin Anghel, Francois Krummenacher, Christian Maier, Renaud Gillon, Benoit Bakeroot, Bart Desoete, Steven Frere, Andre Baguenier Desormeaux, Abhinav Sharma, Michel Declercq, Ad

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 2.65 MB

english, 2006

2

Structural and electrical properties of brush plated ZnTe films

K.R. Murali, M. Ziaudeen, N. Jayaprakash

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 467 KB

english, 2006

3

Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

Sandeep Kumar, Y.S. Katharria, Sugam Kumar, D. Kanjilal

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

4

Scalable and multibias high frequency modeling of multi-fin FETs

G. Crupi, D. Schreurs, B. Parvais, A. Caddemi, A. Mercha, S. Decoutere

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

5

First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices

Zhenye Zhu, Biao Wang, Hai Wang, Yue Zheng, Q.K. Li

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 413 KB

english, 2006

6

An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs

Vaskar Sarkar, Aloke K. Dutta

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 396 KB

english, 2006

7

On gate leakage current partition for MOSFET compact model

Jayson Hu, Xuemei Xi, Ali Niknejad, Chenming Hu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 272 KB

english, 2006

8

A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Neti V.L. Narasimha Murty, S. Jit

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 510 KB

english, 2006

9

On the geometrical dependence of low-frequency noise in SiGe HBTs

Enhai Zhao, John D. Cressler, Monir El-Diwany, Tracey L. Krakowski, Alexei Sadovnikov, Dimitar Kocoski

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 305 KB

english, 2006

10

Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics

S. Fregonese, G. Avenier, C. Maneux, A. Chantre, T. Zimmer

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

11

Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

H.C. Koo, Hyunjung Yi, J.D. Song, Joonyeon Chang, S.H. Han

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 538 KB

english, 2006

12

Temperature dependence of a slow component of excess carrier decay curves

Masaya Ichimura

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 184 KB

english, 2006

13

Low-temperature carbon monoxide gas sensors based gold/tin dioxide

Shurong Wang, Yingqiang Zhao, Jing Huang, Yan Wang, Shihua Wu, Shoumin Zhang, Weiping Huang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 243 KB

english, 2006

14

ICP-induced defects in GaN characterized by capacitance analysis

Wen-How Lan, Kuo-Chin Huang, Kai Feng Huang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 174 KB

english, 2006

15

Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications

M. Si Moussa, C. Pavageau, D. Lederer, L. Picheta, F. Danneville, N. Fel, J. Russat, J.-P. Raskin, D. Vanhoenacker-Janvier

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 898 KB

english, 2006

16

IFC - Editorial Board

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 84 KB

english, 2006

17

Author Index

Journal:

Solid-State Electronics

Year:

2006

File:

PDF, 48 KB

2006

18

Keyword Index

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 52 KB

english, 2006

19

Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

C.S. Ho, Y.C. Lo, Y.H. Chang, Juin J. Liou

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

20

CCD image sensor with compensated reset operation

Sangsik Park, Hyung Soo Uh, Soeun Park

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

21

High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

Yi Zhou, Dake Wang, Claude Ahyi, Chin-Che Tin, John Williams, Minseo Park, N. Mark Williams, Andrew Hanser

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 358 KB

english, 2006

22

Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface

A.K.M. Ahsan, Shaikh Ahmed

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

23

Corrigendum to “Benchmark test on surface potential based charge-sheet model” [Solid-State Electronics 2006;50(2):263–267]

Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 80 KB

english, 2006

24

Numerical analysis of void-induced thermal effects on GaAs/AlxGa1−xAs high power single-quantum-well laser diodes

F. Gity, V. Ahmadi, M. Noshiravani

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

25

A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures

Lingquan Wang, Deli Wang, Peter M. Asbeck

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 855 KB

english, 2006

26

Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic

Ching-Hong Ho, Yuo-Hsien Shiau

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 396 KB

english, 2006

27

A voltage-dependent channel length extraction method for MOSFET’s

Mojtaba Joodaki

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

28

Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Adelmo Ortiz-Conde, Francisco J. García Sánchez

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

29

Modeling of N-well device and N-well field resistors

Rahul Kumar Singh, J.N. Roy

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.14 MB

english, 2006

30

A novel approach to fabricate a PPy/p-type Si heterojunction

Rakesh Poddar, Cheng Luo

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 362 KB

english, 2006