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Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs
Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. BolognesiVolume:
52
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2008.05.007
File:
PDF, 764 KB
english, 2008