Drain-to-gate field engineering for improved frequency...

Solid-State Electronics 2008 Vol. 52; Iss. 8

Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs

N. Pala, X. Hu, J. Deng, J. Yang, R. Gaska, Z. Yang, A. Koudymov, M.S. Shur, G. Simin
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Volume:
52
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2008.05.010
File:
PDF, 476 KB
english, 2008
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