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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
X.L. Wang, T.S. Chen, H.L. Xiao, J. Tang, J.X. Ran, M.L. Zhang, C. Feng, Q.F. Hou, M. Wei, L.J. Jiang, J.M. Li, Z.G. WangVolume:
53
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2009.01.003
File:
PDF, 438 KB
english, 2009