Volume 53; Issue 3

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Solid-State Electronics
Volume 53; Issue 3

Solid-State Electronics

Volume 53; Issue 3

1

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

A.V. Vishnyakov, Yu.N. Novikov, V.A. Gritsenko, K.A. Nasyrov

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 425 KB

english, 2009

2

Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta, Amitava DasGupta

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 604 KB

english, 2009

3

Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

Feng Rao, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, Bomy Chen

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 343 KB

english, 2009

4

A comprehensive model of frequency dispersion in 4H–SiC MESFET

Hongliang Lu, Yimen Zhang, Yuming Zhang, Tao Zhang

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 603 KB

english, 2009

5

Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors

I. Marano, V. d’Alessandro, N. Rinaldi

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 667 KB

english, 2009

6

Measurement of the MOSFET drain current variation under high gate voltage

Kazuo Terada, Tetsuo Chagawa, Jianyu Xiang, Katsuhiro Tsuji, Takaaki Tsunomura, Akio Nishida

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 717 KB

english, 2009

7

Performance evaluation of sphere-form cathodes in the fabrication of optoelectronic In2O3SnO2 PET

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 630 KB

english, 2009

8

Gated tunnel diode in oscillator applications with high frequency tuning

L.-E. Wernersson, M. Ärlelid, M. Egard, E. Lind

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 553 KB

english, 2009

9

Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (1 0 0) and (1 1 0) silicon surfaces

Md. Khalid Ashraf, Asif Islam Khan, Anisul Haque

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 609 KB

english, 2009

10

Visualization of local gate control in a ZnO inter-nanowire junction device

Jin-Hyung Lim, Hyun Jin Ji, Goo-Eun Jung, Kyung Hoon Chung, Gyu-Tae Kim, Jeong Sook Ha, Ji-Yong Park, Se-Jong Kahng

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 533 KB

english, 2009

11

Negative capacitance in light-emitting devices

C.Y. Zhu, L.F. Feng, C.D. Wang, H.X. Cong, G.Y. Zhang, Z.J. Yang, Z.Z. Chen

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 554 KB

english, 2009

12

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

X.L. Wang, T.S. Chen, H.L. Xiao, J. Tang, J.X. Ran, M.L. Zhang, C. Feng, Q.F. Hou, M. Wei, L.J. Jiang, J.M. Li, Z.G. Wang

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 438 KB

english, 2009

13

Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT

M.A. Huque, S.A. Eliza, T. Rahman, H.F. Huq, S.K. Islam

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 603 KB

english, 2009

14

Optical properties studies in InGaN/GaN multiple-quantum well

Lihong Zhu, Baolin Liu

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 459 KB

english, 2009

15

Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation

Banani Sen, Hei Wong, B.L. Yang, P.K. Chu, K. Kakushima, H. Iwai

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 484 KB

english, 2009

16

Discussions and extension of van Vliet’s noise model for high speed bipolar transistors

Kejun Xia, Guofu Niu

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 403 KB

english, 2009

17

Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch

E. Darabi, V. Ahmadi

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 594 KB

english, 2009

18

Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile

Miin-Horng Juang, S.-H. Cheng, S.-L. Jang

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 707 KB

english, 2009

19

Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators

M.I. Vexler, A. Kuligk, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 612 KB

english, 2009

20

Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Seong-Wan Ryu, Jin-Woo Han, Chung-Jin Kim, Sungho Kim, Yang-Kyu Choi

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 524 KB

english, 2009

21

Pure red organic light-emitting diode based on a europium complex

Qin Xue, Ping Chen, Jianhua Lu, Guohua Xie, Jingying Hou, Shiyong Liu, Yi Zhao, Liying Zhang, Bin Li

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

22

Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

F. Rochette, M. Cassé, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, F. Boulanger

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 502 KB

english, 2009

23

Editorial Board

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 66 KB

english, 2009

24

A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric

Jae-Hong Kwon, Sang-Il Shin, Jinnil Choi, Myung-Ho Chung, Hochul Kang, Byeong-Kwon Ju

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 1.37 MB

english, 2009

25

Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications

Chun-Hsien Huang, En-Jui Li, Wai-Jyh Chang, Na-Fu Wang, Chen-I Hung, Mau-Phon Houng

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 697 KB

english, 2009

26

Zinc tin oxide based driver for highly transparent active matrix OLED displays

Patrick Görrn, Fatemeh Ghaffari, Thomas Riedl, Wolfgang Kowalsky

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 331 KB

english, 2009

27

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

A. Tsormpatzoglou, C.A. Dimitriadis, M. Mouis, G. Ghibaudo, N. Collaert

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 451 KB

english, 2009

28

A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

A. Esposito, M. Luisier, M. Frey, A. Schenk

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 613 KB

english, 2009

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