Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack
F. Rochette, M. Cassé, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, F. BoulangerVolume:
53
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2009.01.017
File:
PDF, 502 KB
english, 2009