SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress
M.S. Rahman, E.K. Evangelou, I.I. Androulidakis, A. Dimoulas, G. Mavrou, S. GalataVolume:
54
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2010.04.023
File:
PDF, 794 KB
english, 2010