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Volume 54; Issue 9
Main
Solid-State Electronics
Volume 54; Issue 9
Solid-State Electronics
Volume 54; Issue 9
1
On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices
M. Becherer
,
J. Kiermaier
,
S. Breitkreutz
,
G. Csaba
,
X. Ju
,
J. Rezgani
,
T. Kießling
,
C. Yilmaz
,
P. Osswald
,
P. Lugli
,
D. Schmitt-Landsiedel
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.14 MB
Your tags:
english, 2010
2
A novel self-refreshable capacitorless DRAM cell and its extended applications
Peng-Fei Wang
,
Lei Liu
,
Dongping Wu
,
Song-Gan Zang
,
Wei Liu
,
Yi Gong
,
David Wei Zhang
,
Shi-Li Zhang
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.14 MB
Your tags:
english, 2010
3
Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement
S. Reggiani
,
M. Denison
,
E. Gnani
,
A. Gnudi
,
G. Baccarani
,
S. Pendharkar
,
R. Wise
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.00 MB
Your tags:
english, 2010
4
HfO2-based gate stacks transport mechanisms and parameter extraction
J. Coignus
,
C. Leroux
,
R. Clerc
,
R. Truche
,
G. Ghibaudo
,
G. Reimbold
,
F. Boulanger
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.24 MB
Your tags:
english, 2010
5
Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results
E.A. Gutierrez-D
,
J. Molina-R
,
P. Garcia-R
,
J. Martinez-C
,
F. Guarin
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 904 KB
Your tags:
english, 2010
6
Double-gate pentacene thin-film transistor with improved control in sub-threshold region
Dimitrios Tsamados
,
Nenad V. Cvetkovic
,
Katrin Sidler
,
Jyotshna Bhandari
,
Veronica Savu
,
Juergen Brugger
,
Adrian M. Ionescu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.91 MB
Your tags:
english, 2010
7
Ultra-high aspect-ratio FinFET technology
Vladimir Jovanović
,
Tomislav Suligoj
,
Mirko Poljak
,
Yann Civale
,
Lis K. Nanver
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 974 KB
Your tags:
english, 2010
8
SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress
M.S. Rahman
,
E.K. Evangelou
,
I.I. Androulidakis
,
A. Dimoulas
,
G. Mavrou
,
S. Galata
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 794 KB
Your tags:
english, 2010
9
Formation of silicon ultra shallow junction by non-melt excimer laser treatment
A. Florakis
,
A. Papadimitriou
,
N. Chatzipanagiotis
,
N. Misra
,
C. Grigoropoulos
,
D. Tsoukalas
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 899 KB
Your tags:
english, 2010
10
Modeling of gate-all-around charge trapping SONOS memory cells
E. Gnani
,
S. Reggiani
,
A. Gnudi
,
G. Baccarani
,
J. Fu
,
N. Singh
,
G.Q. Lo
,
D.L. Kwong
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.07 MB
Your tags:
english, 2010
11
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin’s technique
J. Antoszewski
,
J.M. Dell
,
L. Faraone
,
N. Bresson
,
S. Cristoloveanu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 318 KB
Your tags:
english, 2010
12
C–V profiling of ultra-shallow junctions using step-like background profiles
Miloš Popadić
,
Vladimir Milovanović
,
Cuiqin Xu
,
Francesco Sarubbi
,
Lis K. Nanver
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 484 KB
Your tags:
english, 2010
13
Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
T.D. Lin
,
H.C. Chiu
,
P. Chang
,
Y.H. Chang
,
Y.D. Wu
,
M. Hong
,
J. Kwo
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 2010
14
Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers
L.K. Chu
,
R.L. Chu
,
T.D. Lin
,
W.C. Lee
,
C.A. Lin
,
M.L. Huang
,
Y.J. Lee
,
J. Kwo
,
M. Hong
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.27 MB
Your tags:
english, 2010
15
VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
Emanuele Baravelli
,
Luca De Marchi
,
Nicolò Speciale
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1019 KB
Your tags:
english, 2010
16
Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors
F. Carrara
,
C.D. Presti
,
A. Scuderi
,
G. Palmisano
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.66 MB
Your tags:
english, 2010
17
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
M. Najmzadeh
,
K. Boucart
,
W. Riess
,
A.M. Ionescu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 954 KB
Your tags:
english, 2010
18
Simple and efficient modeling of the E–k relationship and low-field mobility in Graphene Nano-Ribbons
Marco Bresciani
,
Pierpaolo Palestri
,
David Esseni
,
Luca Selmi
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 742 KB
Your tags:
english, 2010
19
Scaling beyond CMOS: Turing-Heisenberg Rapprochement
Victor V. Zhirnov
,
Ralph K. Cavin III
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 543 KB
Your tags:
english, 2010
20
Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling
Sokrates T. Pantelides
,
L. Tsetseris
,
M.J. Beck
,
S.N. Rashkeev
,
G. Hadjisavvas
,
I.G. Batyrev
,
B.R. Tuttle
,
A.G. Marinopoulos
,
X.J. Zhou
,
D.M. Fleetwood
,
R.D. Schrimpf
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.16 MB
Your tags:
english, 2010
21
Ultra-thin chip technology and applications, a new paradigm in silicon technology
Joachim N. Burghartz
,
Wolfgang Appel
,
Christine Harendt
,
Horst Rempp
,
Harald Richter
,
Martin Zimmermann
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 2.31 MB
Your tags:
english, 2010
22
Function by defects at the atomic scale – New concepts for non-volatile memories
Rainer Waser
,
Regina Dittmann
,
Martin Salinga
,
Matthias Wuttig
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.29 MB
Your tags:
english, 2010
23
Foreward
A. Dimoulas
,
D. Tsoukalas
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 109 KB
Your tags:
english, 2010
24
Editorial Board
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 64 KB
Your tags:
english, 2010
25
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below
C. Fenouillet-Beranger
,
P. Perreau
,
S. Denorme
,
L. Tosti
,
F. Andrieu
,
O. Weber
,
S. Monfray
,
S. Barnola
,
C. Arvet
,
Y. Campidelli
,
S. Haendler
,
R. Beneyton
,
C. Perrot
,
C. de Buttet
,
P. Gros
,
L. Pham-Ngu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.16 MB
Your tags:
english, 2010
26
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
T. Chiarella
,
L. Witters
,
A. Mercha
,
C. Kerner
,
M. Rakowski
,
C. Ortolland
,
L.-Å. Ragnarsson
,
B. Parvais
,
A. De Keersgieter
,
S. Kubicek
,
A. Redolfi
,
C. Vrancken
,
S. Brus
,
A. Lauwers
,
P. Absil
,
S. Biese
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.79 MB
Your tags:
english, 2010
27
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
C. Urban
,
M. Emam
,
C. Sandow
,
Q.T. Zhao
,
A. Fox
,
S. Mantl
,
J.-P. Raskin
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 978 KB
Your tags:
english, 2010
28
Investigation of the performance of strained-SiGe vertical IMOS-transistors
Thanh Viet Dinh
,
Rainer Kraus
,
Christoph Jungemann
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 819 KB
Your tags:
english, 2010
29
Epitaxial graphene field-effect transistors on silicon substrates
Hyun-Chul Kang
,
Hiromi Karasawa
,
Yu Miyamoto
,
Hiroyuki Handa
,
Tetsuya Suemitsu
,
Maki Suemitsu
,
Taiichi Otsuji
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1005 KB
Your tags:
english, 2010
30
Estimation of amorphous fraction in multilevel phase-change memory cells
N. Papandreou
,
A. Pantazi
,
A. Sebastian
,
E. Eleftheriou
,
M. Breitwisch
,
C. Lam
,
H. Pozidis
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 791 KB
Your tags:
english, 2010
31
Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration
Soshi Sato
,
Hideyuki Kamimura
,
Hideaki Arai
,
Kuniyuki Kakushima
,
Parhat Ahmet
,
Kenji Ohmori
,
Keisaku Yamada
,
Hiroshi Iwai
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 647 KB
Your tags:
english, 2010
32
Managing annealing pattern effects in 45 nm low power CMOS technology
P. Morin
,
F. Cacho
,
R. Beneyton
,
B. Dumont
,
A. Colin
,
H. Bono
,
A. Villaret
,
E. Josse
,
R. Bianchini
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.21 MB
Your tags:
english, 2010
33
Gate-all-around technology: Taking advantage of ballistic transport?
J.L. Huguenin
,
G. Bidal
,
S. Denorme
,
D. Fleury
,
N. Loubet
,
A. Pouydebasque
,
P. Perreau
,
F. Leverd
,
S. Barnola
,
R. Beneyton
,
B. Orlando
,
P. Gouraud
,
T. Salvetat
,
L. Clement
,
S. Monfray
,
G. Ghibaudo
,
F.
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.12 MB
Your tags:
english, 2010
34
Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
Montserrat Fernández-Bolaños
,
Catherine Dehollain
,
Pierre Nicole
,
Adrian M. Ionescu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 1.05 MB
Your tags:
english, 2010
35
Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces
Mohamed Abd Allah
,
Robert Thalhammer
,
Jyrki Kaitila
,
Thomas Herzog
,
Werner Weber
,
Doris Schmitt-Landsiedel
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 768 KB
Your tags:
english, 2010
36
Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)
S. Baudot
,
F. Andrieu
,
O. Faynot
,
J. Eymery
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 912 KB
Your tags:
english, 2010
37
A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section
L. De Michielis
,
L. Selmi
,
A.M. Ionescu
Journal:
Solid-State Electronics
Year:
2010
Language:
english
File:
PDF, 815 KB
Your tags:
english, 2010
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