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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors
S. Arulkumaran, G.I. Ng, C.H. Lee, Z.H. Liu, K. Radhakrishnan, N. Dharmarasu, Z. SunVolume:
54
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2010.05.002
File:
PDF, 526 KB
english, 2010