Volume 54; Issue 11

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Solid-State Electronics
Volume 54; Issue 11

Solid-State Electronics

Volume 54; Issue 11

1

AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study

Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 793 KB

english, 2010

2

Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation

Yudai Kamada, Shizuo Fujita, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 596 KB

english, 2010

3

On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation

Akeed A. Pavel, M. Rezwan Khan, N.E. Islam

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 910 KB

english, 2010

4

Retention modeling of nanocrystalline flash memories: A Monte Carlo approach

Bahniman Ghosh, Hai Liu, Brian Winstead, Mark C. Foisy, Sanjay K. Banerjee

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 413 KB

english, 2010

5

Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

M.C. Wang, S.W. Tsao, T.C. Chang, Y.P. Lin, Po-Tsun Liu, J.R. Chen

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 289 KB

english, 2010

6

Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes

J.L. Alonso, J.C. Ferrer, A. Salinas-Castillo, R. Mallavia, S. Fernández de Ávila

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 332 KB

english, 2010

7

Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors

R. Driad, R. Lösch, F. Benkhelifa, M. Kuri, J. Rosenzweig

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 888 KB

english, 2010

8

Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED

S.H. Tu, J.C. Chen, F.S. Hwu, G.J. Sheu, F.L. Lin, S.Y. Kuo, J.Y. Chang, C.C. Lee

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.42 MB

english, 2010

9

Analytical current equation for short channel SOI multigate FETs including 3D effects

Alexander Kloes, Michaela Weidemann, Mike Schwarz

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 631 KB

english, 2010

10

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

S. Arulkumaran, G.I. Ng, C.H. Lee, Z.H. Liu, K. Radhakrishnan, N. Dharmarasu, Z. Sun

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 526 KB

english, 2010

11

Improving the cell characteristics using arch-active profile in NAND flash memory having 60 nm design-rule

Daewoong Kang, Hyungcheol Shin

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 908 KB

english, 2010

12

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

O. Lancry, E. Pichonat, J. Réhault, M. Moreau, R. Aubry, C. Gaquière

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 256 KB

english, 2010

13

Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs

C. Barrett, D. Lederer, G. Redmond, W. Xiong, J.P. Colinge, A.J. Quinn

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 710 KB

english, 2010

14

Bipolar magnetotransistor sensor with digital output

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 301 KB

english, 2010

15

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator

Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

16

Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes

Albrecht Jander, Pallavi Dhagat

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 750 KB

english, 2010

17

Impact of transparent conductive oxide on the admittance of thin film solar cells

F. Principato, G. Cannella, S. Lombardo, M. Foti

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 371 KB

english, 2010

18

A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison

Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 571 KB

english, 2010

19

Infrared light emitting device with two color emission

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 307 KB

english, 2010

20

Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces

N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, A. Vert

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 517 KB

english, 2010

21

Impact of circuit assist methods on margin and performance in 6T SRAM

Randy W. Mann, Jiajing Wang, Satyanand Nalam, Sudhanshu Khanna, Geordie Braceras, Harold Pilo, Benton H. Calhoun

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 794 KB

english, 2010

22

Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET

Cecilia M. Mezzomo, Aurelie Bajolet, Augustin Cathignol, Emmanuel Josse, Gérard Ghibaudo

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 537 KB

english, 2010

23

Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks

Chun-Chang Lu, Kuei-Shu Chang-Liao, Che-Hao Tsao, Tien-Ko Wang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

24

Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs

Gerard F. Santillan-Quiñonez, Victor Champac, Roberto S. Murphy

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 843 KB

english, 2010

25

Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction

Marco A. Rodríguez, Abraham Claudio, Maria Cotorogea, Leobardo H. González, Jesús Aguayo

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 2.03 MB

english, 2010

26

Scaling projections for Sb-based p-channel FETs

M.G. Ancona, B.R. Bennett, J.B. Boos

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.22 MB

english, 2010

27

Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances

C. Gerardi, E. Tripiciano, G. Cinà, S. Lombardo, C. Garozzo, D. Corso, G. Betrò, C. Pace, F. Crupi

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 990 KB

english, 2010

28

Accurate small signal modeling and extraction of silicon MOSFET for RF IC application

Yang Tang, Li Zhang, Yan Wang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 615 KB

english, 2010

29

Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation

Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.25 MB

english, 2010

30

Editorial Board

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 64 KB

english, 2010

31

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Xiaoxu Cheng, Yan Wang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 349 KB

english, 2010

32

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Moonju Cho, Robin Degraeve, Philippe Roussel, Bogdan Govoreanu, Ben Kaczer, Mohammed B. Zahid, Eddy Simoen, Antonio Arreghini, Malgorzata Jurczak, Jan Van Houdt, Guido Groeseneken

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

33

Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils

Jaehyun Moon, Yong-Hae Kim, Dong-Jin Park, Choong-Heui Chung, Seung-Youl Kang, Jin-Ho Lee

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 881 KB

english, 2010

34

2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET

Mike Schwarz, Michaela Weidemann, Alexander Kloes, Benjamín Iñíguez

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.60 MB

english, 2010

35

An analytical model for square GAA MOSFETs including quantum effects

E. Moreno, J.B. Roldán, F.G. Ruiz, D. Barrera, A. Godoy, F. Gámiz

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.13 MB

english, 2010

36

Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET

Sudipta Sarkar, Ananda S. Roy, Santanu Mahapatra

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 903 KB

english, 2010

37

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

D.F. Storm, D.S. Katzer, D.A. Deen, R. Bass, D.J. Meyer, J.A. Roussos, S.C. Binari, T. Paskova, E.A. Preble, K.R. Evans

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

38

A new vertical MOSFET “Vertical Logic Circuit (VLC) MOSFET” suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit

Koji Sakui, Tetsuo Endoh

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.14 MB

english, 2010

39

The effect of photodiode shape on charge transfer in CMOS image sensors

Bhumjae Shin, Sangsik Park, Hyuntaek Shin

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 973 KB

english, 2010

40

Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

Lingquan Wang, Peter M. Asbeck, Yuan Taur

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 509 KB

english, 2010

41

Comparison and improvement of two core compact models for double-gate MOSFETs

Xingye Zhou, Zhize Zhou, Jian Zhang, Lining Zhang, Chenyue Ma, Jin He, Xing Zhang

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 339 KB

english, 2010

42

Analysis of transient behavior of AlGaN/GaN MOSHFET

Y. Hayashi, S. Kishimoto, T. Mizutani

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 983 KB

english, 2010

43

Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

J.P. Kar, S. Kim, B. Shin, K.I. Park, K.J. Ahn, W. Lee, J.H. Cho, J.M. Myoung

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 787 KB

english, 2010