Control of strain relaxation behavior of Ge1−xSnx buffer...

Solid-State Electronics 2011 Vol. 60; Iss. 1

Control of strain relaxation behavior of Ge1−xSnx buffer layers

Yosuke Shimura, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima
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Volume:
60
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.01.023
File:
PDF, 1.21 MB
english, 2011
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