Volume 60; Issue 1

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Solid-State Electronics
Volume 60; Issue 1

Solid-State Electronics

Volume 60; Issue 1

1

X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(0 0 1) substrates

Kouhei Ebihara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Gang Wang, Matty Caymax, Yasuhiko Imai, Shigeru Kimura, Osami Sakata

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.15 MB

english, 2011

2

Double-polysilicon SiGe HBT architecture with lateral base link

A. Fox, B. Heinemann, H. Rücker

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.31 MB

english, 2011

3

Study of Arsenic ion implantation of patterned strained Si NWs

R.A. Minamisawa, S. Habicht, L. Knoll, Q.T. Zhao, D. Buca, S. Mantl, F. Köhler, R. Carius

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

4

Ge1−xSnx stressors for strained-Ge CMOS

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, A. Sakai, O. Nakatsuka, S. Zaima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.46 MB

english, 2011

5

Control of strain relaxation behavior of Ge1−xSnx buffer layers

Yosuke Shimura, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.21 MB

english, 2011

6

Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs

Yoshihiko Moriyama, Yuuichi Kamimuta, Keiji Ikeda, Tsutomu Tezuka

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 848 KB

english, 2011

7

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

Tsuyoshi Nishimura, Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, Shigeaki Zaima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 2.19 MB

english, 2011

8

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress

Thanh Viet Dinh, Sung-Min Hong, Christoph Jungemann

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 640 KB

english, 2011

9

Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen

Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 734 KB

english, 2011

10

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, Dong Wang, Hiroshi Nakashima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 833 KB

english, 2011

11

Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD

Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd Tillack

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 878 KB

english, 2011

12

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.07 MB

english, 2011

13

SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

J.Y. Andersson, P. Ericsson, H.H. Radamson, S.G.E. Wissmar, M. Kolahdouz

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 897 KB

english, 2011

14

High-density formation of Ge quantum dots on SiO2

Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, Shotaro Takeuchi, Yosuke Shimura, Shigeaki Zaima, Seiichi Miyazaki

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 766 KB

english, 2011

15

Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 933 KB

english, 2011

16

Integration of MOSFETs with SiGe dots as stressor material

L.K. Nanver, V. Jovanović, C. Biasotto, J. Moers, D. Grützmacher, J.J. Zhang, N. Hrauda, M. Stoffel, F. Pezzoli, O.G. Schmidt, L. Miglio, H. Kosina, A. Marzegalli, G. Vastola, G. Mussler, J. Stangl, G

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.89 MB

english, 2011

17

Growth-direction-dependent characteristics of Ge-on-insulator by Si–Ge mixing triggered melting growth

Y. Ohta, T. Tanaka, K. Toko, T. Sadoh, M. Miyao

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 748 KB

english, 2011

18

Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 658 KB

english, 2011

19

Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells

M. Kaschel, M. Schmid, M. Oehme, J. Werner, J. Schulze

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

20

Editorial Board

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 63 KB

english, 2011

21

Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

Carsten Reichel, Stephan Kronholz, Thorsten Kammler, Annekathrin Zeun, Gunda Beernink

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 772 KB

english, 2011

22

Foreword

Mikael Östling, B. Gunnar Malm, Henry H. Radamson

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 108 KB

english, 2011

23

Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD

Oliver Skibitzki, Yuji Yamamoto, Markus Andreas Schubert, Günter Weidner, Bernd Tillack

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.00 MB

english, 2011

24

Subband structure and effective mass of relaxed and strained Ge (1 1 0) PMOSFETs

Bing-Fong Hsieh, Shu-Tong Chang

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 832 KB

english, 2011

25

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 738 KB

english, 2011

26

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, D.R. Leadley

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 939 KB

english, 2011

27

Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

B. Vincent, R. Loo, W. Vandervorst, J. Delmotte, B. Douhard, V.K. Valev, M. Vanbel, T. Verbiest, J. Rip, B. Brijs, T. Conard, C. Claypool, S. Takeuchi, S. Zaima, J. Mitard, B. De Jaeger, J. Dekoster,

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

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