Formation of Ni(Ge1−xSnx) layers with solid-phase reaction...

Solid-State Electronics 2011 Vol. 60; Iss. 1

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

Tsuyoshi Nishimura, Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, Shigeaki Zaima
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Volume:
60
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2011.01.025
File:
PDF, 2.19 MB
english, 2011
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