Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
Iwasaki, T., Harada, Hiroshi, Haga, HiroyoVolume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1731
File:
PDF, 458 KB
1995