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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric
Wang, Li-Sheng, Xu, Jing-Ping, Liu, Lu, Lu, Han-Han, Lai, Pui-To, Tang, Wing-ManVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2396972
Date:
April, 2015
File:
PDF, 1.38 MB
english, 2015