Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD...

Materials Science Forum 2002 Vol. 389-393

Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation

Schöner, Adolf, Konstantinov, Andrey O., Karlsson, S., Berge, R.
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.187
File:
PDF, 472 KB
2002
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