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Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
Tomokage, H., Ishiwata, Y., Souno, H., Kawakami, Masahiro, Sonoda, N.Volume:
63-64
Year:
1998
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.63-64.407
File:
PDF, 733 KB
1998