4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

Materials Science Forum 2002 Vol. 389-393

4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

Kaneko, Saichirou, Tanaka, Hideaki, Shimoida, Yoshio, Kiritani, Norihiko, Tanimoto, Satoshi, Yamanaka, Mitsugu, Hoshi, Masakatsu
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.1073
File:
PDF, 321 KB
2002
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