Hall Measurements of Inversion and Accumulation-Mode 4H-SiC...

Materials Science Forum 2002 Vol. 389-393

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Chatty, K., Banerjee, S., Chow, T.P., Gutmann, Ronald J., Arnold, Emil, Alok, Dev
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.1041
File:
PDF, 306 KB
2002
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