Trap Profiling in Nitride Storage Layer in 3-D NAND Flash...

IEEE Electron Device Letters 2015 / 6 Vol. 36; Iss. 6

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- $\text{g}_{\mathrm {m}}$ Method

Jeong, Min-Kyu, Kang, Ho-Jung, Joe, Sung-Min, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2419277
Date:
June, 2015
File:
PDF, 256 KB
english, 2015
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